Transparent with wide band gap InZnO nano thin film: Preparation and characterizations

• Novel wide band gap transparent InZnO nano thin films prepared from InZnO NPs by thermal evaporation technique.
• XRD patterns revealed a mixed phase of cubic In2O3 and wurtzite-hexagonal ZnO.
• SEM images showed a spherical shape with uniform distribution of NPs over entire film surface.
• High transparency, low absorption and wide band gap energy obtained from optical study.

Novel indium zinc oxide (InZnO) thin film of 100 nm thickness was prepared onto pre-cleaned glass plate by thermal evaporation technique from InZnO nanoparticles. The metal oxide (In–O and Zn–O) bond and In, Zn and O elements present in the films were confirmed by Fourier transform infrared spectroscopy and energy dispersive X-ray spectroscopy. The X-ray diffraction patterns revealed the mixed phase of cubic In2O3 and wurzite-hexagonal ZnO structure. SEM images showed smooth surface with uniform distribution of grains (201–240 nm) over the entire film surface. High transparency and low absorption obtained from optical study. The band gap energy was evaluated to be about 3.46–3.55 eV by Tauc’s plot. The structure, smooth surface and high transparency with wide band gap energy lead the thermally evaporated InZnO nano thin film to be used for transparent layer in optoelectronic devices in the future.