Growth of Nd doped (Lu, Gd)3(Ga, Al)5O12 single crystal by the micro pulling down method and their scintillation properties

• Nd doped (Lu, Gd)3(Ga, Al)5O12 single crystals were grown by the μ-PD method.
• Nd:Lu3Ga3Al2O12 has high density of 7.38 g/cm3 and light yield of 6800 photon/MeV.
• Scintillation decay time of Nd:Lu3Ga3Al2O12 was 0.20 μs (5%) 2.60 μs (95%).

Nd 1 mol% doped (Lu, Gd)3(Ga, Al)5O12 (LGGAG) single crystals were grown by the micro-pulling down (μ-PD) method. Luminescence and scintillation properties such as absorption, excitation and emission spectra, light yield and decay time were evaluated. Nd1%:Lu3Al5O12 showed the highest light output of around 8200 photons/MeV among the grown crystals. Scintillation decay time of Nd:Y3Al5O12 was 1.32 μs (36%) 2.02 μs (64%). Nd:Lu3Ga3Al2O12 was relatively high dense scintillator of 7.38 g/cm3 with good light yield of 6800 photons/MeV and scintillation decay time of 0.20 μs (5%) 2.60 μs (95%).