Tm3+ doped Ga–As–S chalcogenide glasses and fibers

• Tm3+ doped Ga–As–S chalcogenide glass based on high purity As2S3 were produced.
• The concentration ratio of Ga and Tm3+ in Ga–As–S glasses is optimized to achieve best luminescence.
• Tm3+ doped optical fiber was drawn using the Ga–As–S as a new host matrix.
• Three emission bands of Tm3+ ions were observed in the Ga based chalcogenide glass fiber.

Tm3+ doped Ga–As–S chalcogenide glass samples were produced using As2S3 pure glass as starting materials. Their photoluminescence properties were characterized and strong emission bands were observed at 1.2 μm (1H5 → 3H6), 1.4 μm (3H4 → 3F4) and 1.8 μm (3F4 → 3H6) under excitation wavelengths of 698 nm and 800 nm. The thulium and gallium concentrations were optimized to achieve the highest photoluminescence efficiency. From the optimal composition, a Tm3+ doped Ga–As–S fiber was drawn and its optical properties were studied.