کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1494313 | 992904 | 2014 | 4 صفحه PDF | دانلود رایگان |

• A series of Eu3+-doped Ba3Lu(PO4)3 red phosphor were firstly synthesized by solid state method.
• Its luminescent properties, concentration quenching process and thermal stability are well studied and characterized.
• Ba3Lu(PO4)3: Eu3+ shows bright red emissions under UV excitation, and red LED prototype were fabricated.
A series of Ba3Lu(PO4)3: Eu3+ phosphors were synthesized by high-temperature solid-state method, and their UV–vis luminescent properties were investigated. The f–f transitions of Eu3+ in the host lattice were assigned and discussed. The excitation and emission spectra indicate that this phosphor can be excited by near ultraviolet (NUV) light, and exhibits strong red emission. The concentration quenching on Eu3+ emission and its mechanism were investigated. This phosphor shows a good thermal stability at high temperature (∼180 °C). The fabricated prototype LEDs with Ba3Lu(PO4)3: Eu3+ and 395 nm-emitting InGaN chips exhibit bright red emission. The present study suggests that Ba3Lu(PO4)3: Eu3+ can be a potential red phosphor for NUV light-emitting diodes.
A thermal-stable red emitting phosphor, Ba3Lu(PO4)3: Eu3+, were synthesized. Bright red light-emitting diodes were fabricated by coating the phosphor onto ∼395 nm-emitting InGaN chips. All these results suggest that the phosphor is promising candidate as red component for fabrication of NUV-based white light-emitting diodes.Figure optionsDownload high-quality image (90 K)Download as PowerPoint slide
Journal: Optical Materials - Volume 36, Issue 4, February 2014, Pages 850–853