Growth of Sc doped RE3Al5O12 (RE = Y, Lu) single crystals by micro-pulling-down method and their scintillation properties

• Sc1%, 2% and 5% doped LuyY3−yAl5O12, (y = 0, 1, 2 and 3) crystals were grown by μ-PD.
• Anti-site defect related host emission have been observed in 280–360 nm.
• Light yield was increased with decreasing Lu and Sc concentration.
• Sc2%:Y3Al5O12 sample showed the highest light yield of 30,000 photon/MeV.
• Scintillation decay times were 670 ns in the Sc2% doped Y3Al5O12 sample.

Sc doped YyLu3−yAl5O12 (y = 0–1) single crystals were grown by the μ-PD method. EPMA techniques were employed to check their chemical composition. Luminescence characteristics were measured. Anti-site defect-related host emission was observed within 280–360 nm wavelength. The light yield was increasing with Y concentration and with an optimum for Sc2% concentration. The Sc 2% doped Y3Al5O12 showed the highest light yield value around 30,000 photon/MeV and 670 ns scintillation decay time using a photomultiplier detector (R7600U). Substitution effects of the Lu site and their influence on luminescence and scintillation properties were studied.