Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal; relationship between Al, Ga site occupancy and scintillation properties

• We grew 2-in. size GAGG single crystals with various Ga concentration by Cz method.
• We investigated Ga segregation and lowest limit of Ga for single crystal growth.
• Light yield has maximum value of 58,000 photon/MeV at x = 2.7 Ga concentration.
• Relation between composition, structure, scintillation properties was discussed.

2-in. size Ce 1%:Gd3(Al1−xGax)5O12 (GAGG) single crystals with various Ga concentration of x = 2, 2.4, 2.7 and 3 were grown by the Czochralski (Cz) method. Light yield has maximum value of 58,000 photon/MeV at x = 2.7 Ga concentration. Energy resolution was improved with decreasing Ga concentration and x = 2.4 sample showed best energy resolution of 4.2%@662 keV. The dependence of scintillation properties on crystal structure and Al–Ga was discussed.