کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1494373 992906 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Positive hysteresis of Ce-doped GAGG scintillator
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Positive hysteresis of Ce-doped GAGG scintillator
چکیده انگلیسی


• 800 Gy gamma-ray was irradiated to Ce 1% and 3% doped GAGG crystals, Ce:YAG, Ce:LuAG, Pr:LuAG, and Ce:GAGG ceramic.
• Ce 1% doped GAGG crystal showed positive hysteresis.
• This is the first time to observe positive hysteresis in Ce-doped GAGG.
• In Ce 1% doped GAGG crystal, new excitation band was created around 60 nm after gamma-ray irradiation.

Positive hysteresis and radiation tolerance to high-dose radiation exposure were investigated for Ce 1% and 3% doped Gd3(Al, Ga)5O12 (Ce:GAGG) crystal scintillator on comparison with other garnet scintillators such Ce:YAG, Ce:LuAG, Pr:LuAG, and ceramic Ce:GAGG. When they were irradiated by several Gy 60Co γ-rays, Ce 1% doped GAGG crystal exhibited ∼20% light yield enhancement (positive hysteresis). This is the first time to observe positive hysteresis in Ce doped GAGG. On the other hand, other garnet materials did not show the positive hysteresis and their light yields were stable after 800 Gy irradiation except Pr:LuAG. The light yield of Pr:LuAG decreased largely. When irradiated Ce:GAGG which showed positive hysteresis was evaluated in Synchrotron facility (UVSOR), new excitation band was created around 60 nm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 36, Issue 12, October 2014, Pages 2016–2019
نویسندگان
, , , , , , ,