The time-resolved luminescence characteristics of Ce and Ce/Pr doped YAG ceramics obtained by high pressure technique

Transparent Ce and Ce/Pr doped YAG ceramics were prepared under high pressures (up to 8 GPa) and relative low temperature (450 °C). Grain size of the ceramics is less than 50 nm. However unknown defects or disorders strains on grain boundaries caused the additional absorption in these ceramics. The luminescence intensity, spectra and the decay time dependence on pressure applied during ceramic preparation were studied. Concentration of some intrinsic point defect was reduced under the high pressure applied for sintering process.It is shown that formation time of the excited state of Ce luminescence depends on the pressure applied during ceramic sintering.

► Time-resolved luminescence of YAG nanoceramics doped with Ce and Ce/Pr were studied under ps laser pulse excitation.
► The luminescence intensity dependence on ceramic sintering technique was shown.
► The luminescence excited state creation time were estimate in ceramics with different defect states content.
► The luminescence quenching on grain the boundaries and interface stress field depend on the sintering pressure.