Pentacene growth on 3-aminopropyltrimethoxysilane modified silicon dioxide

The 3-aminopropyltrimethoxysilane (APTMS) self-assembled monolayer (SAM) has been used as a buffer layer between a dielectric (native SiO2) and the pentacene (Pn) thin film. Based on in situ low-energy electron microscope (LEEM) and ex-situ noncontact atomic force microscope (nc-AFM) measurements, it is shown that passivation of SiO2 with APTMS significantly improves the morphology of pentacene films. The observed lower nucleation density of Pn islands on the APTMS-treated surface results in improved crystallinity of the Pn layer. Moreover, the de-wetting of Pn monolayer is prevented by the interfacial APTMS SAM. This has significant potential for the improvement of the FET carrier mobility in Pn-based electronic devices.

► Applied 3-aminopropyltrimethoxysilane as a buffer between SiO2 and pentacene film.
► Lower nucleation density of Pn on APTMS-treated substrate results in a better film.
► APTMS buffer layer prevents de-wetting of Pn film in vacuum.