Quantum efficiency coefficient for photogeneration of carriers in SbSI nanowires

• First time spectral dependence of photoconductivity in aligned SbSI nanowires has been determined.
• Quantum efficiency coefficient for photogeneration of carriers in SbSI nanowires has been determined.
• Mechanisms of optical absorption in SbSI have been discussed.
• Diffusion length and surface recombination velocity of carriers have been evaluated.
• Optical properties of SbSI nanowires have been compared with data of bulk single crystals.

This paper presents investigations of the quantum efficiency coefficient for the photogeneration of carriers in aligned antimony sulfoiodide (SbSI) nanowires. Therefore the spectral dependences (between 488 and 700 nm) of photoconductivity current (IPC) were measured for temperatures from 263 to 323 K and for different light intensities. The least squares method was applied to fit the experimental IPC data with appropriate theoretical dependence. From this fitting, diffusion length and surface recombination velocity of carriers as well as spectral dependences of quantum efficiency coefficients for different temperatures and different light intensities were obtained. A comparison of the values of absorption coefficient obtained from the measurements of optical diffusive reflectance and from evaluation of the quantum efficiency coefficient is presented.