کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1495477 992936 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature-dependent shifts of near band-edge emission and their second-order diffraction for ZnO nanorods
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Temperature-dependent shifts of near band-edge emission and their second-order diffraction for ZnO nanorods
چکیده انگلیسی

The crystal structure and morphology of ZnO, grown on silicon substrate by two-step method, were measured by X-ray diffraction and field emission scanning electron microscopy. The results reveal that the sample is mainly composed of ZnO nanorods and preferentially oriented in the c-axis direction. The photoluminescence properties of the ZnO nanorods were investigated over the temperatures from 10 K to 297 K. There exist three emission bands in near band-edge, green–yellow–orange–red and near-infrared, respectively. Donor bound exciton (D0X) and its phonon replicas emission peaks were observed in low temperature photoluminescence (PL). The D0X and its phonon replicas peak intensity decreased with the increase of temperature and disappeared when the temperature increased up to 87 K. The decay in the D0X and its phonon replicas emission peak intensity stemmed from the thermal dissociation of D0X to free exciton. Temperature-dependent second-order diffraction of the near band-edge emissions were investigated in detail.


► D0X and its phonon replicas emission peaks were observed in low temperature PL.
► The NIR emissions correspond to the second-order diffraction of the NBE emission.
► NBE and NIR emission mechanism were investigated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 34, Issue 11, September 2012, Pages 1917–1920
نویسندگان
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