Growth and luminescent properties of Lu2SiO5 and Lu2SiO5:Ce single crystalline films

Single crystalline films (SCF) of Lu2SiO5 (LSO) and Lu2SiO5:Ce (LSO:Ce) silicates with thickness of 2.5–15 μm were crystallized by liquid phase epitaxy method onto undoped LSO substrates from melt-solution based on PbO–B2O3 flux. The scintillation and luminescence properties of LSO:Ce SCF were compared with the properties of LSO:Ce single crystal. The peculiarities of luminescence properties of LSO:Ce SCF in comparison with crystal analog can be due to different distribution of Ce3+ over the Lu1 and Lu2 positions of LSO host and are further influenced by Pb2+ flux-originated contamination.

Research highlights
► Liquid phase epitaxy as method for growth of Lu2SiO5:Ce single crystalline films.
► Comparison of the luminescence properties of Lu2SiO5:Ce crystals and films.
► Different distribution of Ce ions over the Lu1 / Lu2 positions in films and crystals.