کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1495887 | 992949 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Defect states in Lu3GaxAl5−xO12 crystals and powders
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Defect states in Lu3GaxAl5−xO12 crystals and powders Defect states in Lu3GaxAl5−xO12 crystals and powders](/preview/png/1495887.png)
چکیده انگلیسی
We study defect states in undoped and Eu3+-doped Lu3GaxAl5−xO12 (x = 0–5) garnet crystals by wavelength resolved thermally stimulated luminescence above room temperature. Eu3+ ions act not only as recombination centres but also as high temperature traps, as testified by the presence of a TSL peak at 450 °C correlated with Eu3+-doping. With increasing gallium content all glow peaks are shifted to lower temperatures. This trend is confirmed also for powder samples prepared by sol–gel technique. The observed low temperature shift of the glow peaks can be considered as a consequence of the band gap reduction following the increase of Ga3+ concentration. The comparison with the glow curve of a Ce3+-doped crystal is also shown.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 32, Issue 10, August 2010, Pages 1298–1301
Journal: Optical Materials - Volume 32, Issue 10, August 2010, Pages 1298–1301
نویسندگان
E. Mihokova, A. Vedda, M. Fasoli, F. Moretti, A.-L. Bulin, M. Nikl, M. Bettinelli, A. Speghini, H. Ogino, A. Yoshikawa,