کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1495903 992949 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Scintillation properties of LuAG:Ce single crystalline films grown by LPE method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Scintillation properties of LuAG:Ce single crystalline films grown by LPE method
چکیده انگلیسی

Lu3Al5O12:Ce (LuAG:Ce) thin films were grown from the PbO–B2O3 (PB) and BaO–B2O3–BaF2 (BBB) fluxes using the liquid phase epitaxy method (LPE). Photoelectron yield, its time dependence, and energy resolution were measured under α-particle excitation. A sample of the Czochralski grown bulk LuAG:Ce single crystal was measured as a reference. Photoelectron yield of the crystal was the best, followed by slightly inferior films grown from the BBB flux and still worse performing films grown from the PB flux. The samples grown from BBB flux and reference crystal exhibit the intense slow component in scintillation response. Relative energy resolution is indirectly proportional to photoelectron yield and varies from 9% to 28%. Obtained results are discussed taking into account the influence of the flux and technology used. Additionally, influence of α-particle energy deposition and substrate scintillation response are discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 32, Issue 10, August 2010, Pages 1360–1363
نویسندگان
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