کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1496247 992958 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers
چکیده انگلیسی

The incorporation of Eu ions into GaN has been studied using combined excitation–emission spectroscopy for samples that were in situ doped during organometallic vapor-phase epitaxy (OMVPE) growth. The obtained fingerprints of characteristic emission spectra are subsequently used to determine the coupling of the Eu ions to the crystal lattice. We find a majority site, which exhibits coupling to bulk-like phonon modes as well as a localized phonon mode. For this site, we also find that the zero-phonon line of the 7F0 to 5D0 transition, which is forbidden, is much weaker than the phonon-coupled excitation transitions. The ratio of zero-phonon to phonon-coupled transition strength depends on the crystalline quality of the layer. These observations are consistent with the assignment of the majority site to an unperturbed Eu ion on Ga position. We find that the relative abundance of the majority site is strongly underestimated whenever the zero-phonon 7F0 to 5D0 excitation transition is used as a measure.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 33, Issue 7, May 2011, Pages 1050–1054
نویسندگان
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