کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1496370 992961 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Switching from negative to positive nonlinear absorption in p type 0.5 at% Sn doped GaSe semiconductor crystal
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Switching from negative to positive nonlinear absorption in p type 0.5 at% Sn doped GaSe semiconductor crystal
چکیده انگلیسی

The nonlinear absorption properties of p type 0.5 at% Sn doped GaSe crystal have been studied by using open-aperture Z-scan technique under 1064 nm wavelength and 4 ns or 65 ps pulse duration. A switching from negative nonlinear absorption (saturated absorption) to positive nonlinear absorption (two photon absorption) has been observed as the input laser irradiance increases from 0.049 GW/cm2 to 0.106 GW/cm2. The nonlinear absorption coefficient increases monotonically with the increase of pulse duration from 65 ps to 4 ns.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 31, Issue 11, September 2009, Pages 1663–1666
نویسندگان
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