کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1496732 992973 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effect of C–Al (Ga) codoping on p-type tendency in zinc oxide by first-principles
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
The effect of C–Al (Ga) codoping on p-type tendency in zinc oxide by first-principles
چکیده انگلیسی

The electronic structures of C, C–Al and C–Ga doped ZnO were investigated from the first-principles based on density functional theory (DFT). It was found that the C-doped ZnO where 1/8 Os are substituted by C is p-type with hole carriers locating nearby valence band maximum. Moreover, the Madelung energy increases in this case. Incorporating the reactive donor Al or Ga into C-doped ZnO system at Zn sites, not only enhances the C acceptor concentration, but also gets a shallower C acceptor energy level in the band gap in p-type codoped ZnO crystals and decreases the Madelung energy.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 32, Issue 5, March 2010, Pages 595–598
نویسندگان
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