Comparison of silicon nanocrystals size determination by Raman scattering and transmission electron microscopy measurements

In the context of silicon nanoaggregates elaboration we have studied the Al–SiO2 interface at temperatures under or above the eutectic point. We have reported the formation of diffusion limited aggregates (DLA) or deposition diffusion aggregates (DDA) of silicon. Raman scattering and X-ray analysis have proved the presence of crystalline silicon in these fractal structure and lead us to a typical elementary size in the nanometer range. TEM measurements confirm here the crystallite size and give informations on the silicon structure in high resolution mode. The reaction of Al on SiO2 seems to be a good way to form silicon nanocrystals in SiO2 matrix of calibrate size.