کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1496789 992975 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Nanoparticles doped with TM and RE ions for applications in optoelectronics
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Nanoparticles doped with TM and RE ions for applications in optoelectronics
چکیده انگلیسی

Nanoparticles of wide band gap compounds, when doped with rare earth or transition metal ions, are perspective candidates for efficient phosphors in a new generation of light sources for an overhead illumination, i.e., in compact fluorescence lamps and in semiconductor-based white light emitting diodes. Mechanisms of emission enhancement in doped nanoparticles are discussed based on the relevant experimental results. Mechanisms observed are due to carrier confinement, n-type co-doping, due to surface plasmons generation and super radiance.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 31, Issue 3, January 2009, Pages 490–495
نویسندگان
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