کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1497288 | 992998 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Measurement of the IR absorption induced by visible radiation in amorphous silicon and silicon carbide thin films by an in-guide technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Photoinduced absorption (PA) upon visible radiation (612 nm) has been studied at the wavelength of 1.55 μm in thin a-Si:H and a-SiC:H films fabricated by plasma enhanced chemical vapour deposition onto silicon wafers. Measurements were carried using a recently described in-guide technique. Several a-Si1−xCx:H/ZnO planar waveguides were fabricated in which the a-Si1−xCx:H cores differ in doping and carbon concentration. The in-guide technique confers high sensitivity to the measurements allowing the collection of data at illumination intensities as low as 150 μW/mm2. The phenomenon is highly enhanced by boron doping and quenched by the presence of carbon in the alloy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 30, Issue 8, April 2008, Pages 1240–1243
Journal: Optical Materials - Volume 30, Issue 8, April 2008, Pages 1240–1243
نویسندگان
Maria Arcangela Nigro, Massimo Gagliardi, Francesco Giuseppe Della Corte,