کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1497387 | 993007 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
InN grown on GaN/sapphire templates at different temperatures by MOCVD
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
InN epitaxial layers were grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD) at various temperatures. It was found that surfaces of these samples were all reticular and the sample surface became rougher as we increased the growth temperature. It was also found that growth rate increased with increasing growth temperature and the growth rate could reach 470 nm/h for the InN epitaxial layer grown at 675 °C. Furthermore, it was found that we achieved the highest mobility of 1300 cm2/Vs and the lowest carrier concentration of 4.6 × 1018 cm−3 from the InN epitaxial layer grown at 625 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 30, Issue 4, December 2007, Pages 517–520
Journal: Optical Materials - Volume 30, Issue 4, December 2007, Pages 517–520
نویسندگان
J.C. Lin, Y.K. Su, S.J. Chang, W.H. Lan, W.R. Chen, Y.C. Cheng, W.J. Lin, Y.C. Tzeng, H.Y. Shin, C.M. Chang,