Modelling of Yb-doped planar waveguides grown by rf-sputtering for laser emission at around 980 nm

This paper presents simulation results of planar waveguides doped with trivalent ytterbium ions for compact integrated photonic devices such as diode pumped waveguide laser emitting around 980 nm. Using a quasi three-level laser model based on the Rigrod method and including some recently obtained experimental data, the waveguide parameters favouring a laser emission at about 980 nm were determined. They led to a laser efficiency of approximately 23% and a threshold incident pump power lower than 100 mW. These results pave the way for the achievement of an integrated waveguide laser emitting at 980 nm by pumping around 910 nm.