کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1497634 1510801 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparative optical study of Eu3+ ions doping in InGaN/GaN quantum dots and GaN layer grown by molecular beam epitaxy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Comparative optical study of Eu3+ ions doping in InGaN/GaN quantum dots and GaN layer grown by molecular beam epitaxy
چکیده انگلیسی
We report on a comparative optical study of InGaN:Eu quantum dots (QDs) and GaN:Eu layer grown by molecular beam epitaxy (MBE). Analysis of the 5D0 → 7F2 transition as a function of the excitation wavelength shows that Eu3+ ions in InGaN:Eu QDs are located inside InGaN QDs and also in the GaN barrier layer. The existence of Eu3+ ions in the GaN barrier layer is explained by Eu segregation/diffusion during growth. For Eu3+ ions located inside InGaN QDs the photoluminescence (PL) shows only a slight decrease with temperature from 5 K to 300 K. In contrast, the PL from Eu3+ ions in the GaN barrier layer or in GaN thick layer shows a much more pronounced thermal quenching.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 28, Issues 6–7, May 2006, Pages 775-779
نویسندگان
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