کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1497636 1510801 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Extended X-ray absorption fine structure studies of GaN epilayers doped with Er
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Extended X-ray absorption fine structure studies of GaN epilayers doped with Er
چکیده انگلیسی
The structural properties of Er doped GaN epilayers were studied by means of extended X-ray absorption fine structure (EXAFS) measured at the Er LIII and Ga K-edges. The samples were doped with Er in-situ during growth by molecular beam epitaxy (MBE). The Ga local structure was found to be the same in all samples studied. Er LIII-edge EXAFS showed that when growth conditions were gradually changed from Ga-rich to Ga-poor, an increase in Er concentration from 0.15 at.% to 0.64 at.% is accompanied by the sequential formation of ErGaN, ErGaN clusters with locally high Er content and finally a pure ErN component. This study indicates that Er incorporation into GaN is enhanced under Ga-poor conditions, at the expense of the formation of Er-rich clusters and ErN precipitates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 28, Issues 6–7, May 2006, Pages 785-789
نویسندگان
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