کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1497650 1510801 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Towards epitaxial growth of ErSiO nanostructured crystalline films on Si substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Towards epitaxial growth of ErSiO nanostructured crystalline films on Si substrates
چکیده انگلیسی
ErSiO nanostructured crystalline films were obtained by the self-organization process at above 1200 °C so far. We are studying on the epitaxial growth of ErSiO nanostructured crystalline films on Si substrates with views to reducing the process temperature and controlling the superstructures with layer by layer. In this paper, metal organic molecular beam epitaxy (MOMBE) growth of ErSiO nanostructured crystalline films on 15° off Si(1 0 0) substrates at 900 °C are demonstrated. Tetra ethoxy silane (TEOS) and 2,2,6,6-tetra methyl-3,5-octane dionat erbium (Er(TMOD)3) were used as Si-O and Er-O precursors, respectively. The X-ray diffraction result indicates the crystallization under lower temperature than the self-organization. The PL fine structure of Er-related emissions originated from the crystalline nature was observed in the as-grown ErSiO nanostructured crystalline films at room temperature. Also we discuss the possibility of hetero epitaxial growth of ErSiO nanostructured crystalline films on off-oriented Si(1 0 0) substrates from the results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 28, Issues 6–7, May 2006, Pages 855-858
نویسندگان
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