کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1497658 | 1510801 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Observation of the population inversion of erbium ion states in Si/Si1âxGex:Er/Si structures under optical excitation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work we present the results of theoretical analysis and experimental studies carried out for Si/Si1âxGex:Er/Si structures considered as the candidates for a laser realization. Analysis of the electromagnetic modes distribution and parameters of Si/Si1âxGex:Er/Si waveguides enabling strong localization of the optical modes in the active Si1âxGex:Er layers is given. The Si/Si1âxGex:Er/Si structures in question were grown by the method of sublimation MBE in germane gas atmosphere. The capability of such a method for producing effectively emitting Si/Si1âxGex:Er/Si structures has been demonstrated. The photoluminescence intensity of the structures produced is comparable with that determined for the uniformly doped Si:Er layers with the external quantum efficiency â¼0.4%. We show the possibility to achieve the population inversion of Er3+ ion states in Si/Si1âxGex:Er/Si structures under optical excitation. The population inversion of Er3+ states in these structures sets in at the pump density of â¼0.2Â W/cm2 and reaches its maximal value at â¼4Â W/cm2, where the concentration of Er3+ ions being inversely populated amounts to â¼80% of the total concentration of optically active Er ions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 28, Issues 6â7, May 2006, Pages 893-896
Journal: Optical Materials - Volume 28, Issues 6â7, May 2006, Pages 893-896
نویسندگان
M.V. Stepikhova, L.V. Krasil'nikova, Z.F. Krasil'nik, V.G. Shengurov, V.Yu. Chalkov, D.M. Zhigunov, O.A. Shalygina, V.Yu. Timoshenko,