کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1497677 | 993027 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystal growth and spectroscopic properties of Ho: La3Ga5SiO14 single crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Crystal growth and spectroscopic properties of Ho: La3Ga5SiO14 single crystals Crystal growth and spectroscopic properties of Ho: La3Ga5SiO14 single crystals](/preview/png/1497677.png)
چکیده انگلیسی
Single crystals of Holmium (Ho) doped La3Ga5SiO14 were grown along c-axis by using the Czochralski method. The structure of the crystal was studied by X-ray powder diffraction (XRPD) and found the crystal structure still belonged to the space group P321. The unit-cell parameters were calculated to be a = 0.8187 ± 0.0008 nm, c = 0.5103 ± 0.0006 nm and V = 0.296 nm3. The absorption spectrum and fluorescence spectrum of Ho3+: La3Ga5SiO14 crystal were measured at room temperature. Three emission transitions occurred at 547, 656.5 and 755.5 nm, with emission transitions (5S2 → 5I8) at 547 nm more intense than others.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 29, Issue 6, February 2007, Pages 663–666
Journal: Optical Materials - Volume 29, Issue 6, February 2007, Pages 663–666
نویسندگان
Zengmei Wang, Duorong Yuan, Yansheng Yin, Ge Su,