کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1498236 1510916 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural basis of temperature-dependent electrical resistance of evaporation-deposited amorphous GeSe film
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Structural basis of temperature-dependent electrical resistance of evaporation-deposited amorphous GeSe film
چکیده انگلیسی

We employ EXAFS spectroscopy to refine the local atomic arrangements of evaporation-deposited equiatomic GeSe film. Amorphous structure of the as-deposited GeSe film turns out to satisfy mainly the 4:2 structural model. The crystallized GeSe film, however, consists of the orthorhombic GeSe crystals with the 3:3 atomic arrangements and quasi-crystalline Ge clusters. Its temperature-dependent electrical resistance is explained in connection with this structural difference, which exemplifies significance of the chemical environments on the electrical switching phenomena observed from amorphous chalcogenide solids.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 86, 1 September 2014, Pages 56–59
نویسندگان
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