Control of defects in a novel aluminum-induced heteroepitaxial growth of AlxGal-xP nanocrystals on silicon nanowires

Aluminum-induced heteroepitaxial growth of aluminum gallium phosphide nanocrystals (AlxGal-xP NCs) has been achieved on both silicon substrate and the tips of Al-catalyzed silicon nanowires (Si NWs). Al-induced growth is a silicon complementary metal–oxide-semiconductor compatible solution, and a growth mechanism of AlxGal-xP NCs was proposed. The decrease in structural defects in AlxGal-xP NCs grown heteroepitaxially on Si NWs was confirmed by transmission electron microscopy and Raman spectroscopy.