کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1498780 993279 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Nature of the ZnSe/GaAs interface investigated by atom probe tomography
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Nature of the ZnSe/GaAs interface investigated by atom probe tomography
چکیده انگلیسی

A ZnSe layer grown on a GaAs substrate by molecular beam epitaxy has been analysed by atom probe tomography. The one-dimensional concentration profile shows separation between Zn and Se and between Ga and As at the interface. A comparison of the concentration profile with different interface models suggests that the formation of a Ga2 + xSe3 compound at the ZnSe/GaAs interface with fewer vacancies than Ga2Se3 (x = 0.7). These results show the ability of atom probe tomography to characterize the interface at the atomic scale.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 69, Issue 7, October 2013, Pages 505–508
نویسندگان
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