کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1498883 | 1510932 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nucleation and growth of dislocation loops in Cu, Al and Si by a concurrent atomistic-continuum method
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Nucleation and growth of dislocation loops in Cu, Al and Si by a concurrent atomistic-continuum method Nucleation and growth of dislocation loops in Cu, Al and Si by a concurrent atomistic-continuum method](/preview/png/1498883.png)
چکیده انگلیسی
Submicron-sized samples with 42,000 finite elements containing up to ∼86 million atoms have been simulated using a concurrent atomistic-continuum method. The simulations reproduce not only nucleation and growth of semicircular dislocation loops in Cu and Al, but also hexagonal shuffle dislocation loops in Si, with the loop radius approaching ∼75 nm. Details of leading and trailing partial dislocations connected by intrinsic stacking faults, dislocation loop coalescence through annihilation, and formation of junctions are reproduced.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 67, Issues 7–8, October 2012, Pages 633–636
Journal: Scripta Materialia - Volume 67, Issues 7–8, October 2012, Pages 633–636
نویسندگان
Liming Xiong, David L. McDowell, Youping Chen,