Quantification of characteristic parameters for the dissociation kinetics of iron–boron pairs in Czochralski silicon

We have developed a new process to quantify the dissociation kinetics of iron–boron (FeB) pairs in Czochralski silicon. It is based on determining the characteristic parameters for the association kinetics of FeB pairs by low-temperature thermal activation experiments. The dissociation rates can then be derived from the equilibrium concentration and association rates of FeB pairs at elevated temperatures. Our results show an activation energy of 1.20 eV and an attempt frequency of 9 × 1012 s−1 for FeB dissociation.