In situ stress relaxation and diffraction studies across the metal–insulator transition in epitaxial and polycrystalline SmNiO3 thin films

We investigate structure and stress relaxation in situ across the metal–insulator transition in SmNiO3 thin films. An epitaxial thin film of SmNiO3 grown on LaAlO3 single crystal shows a metal–insulator transition at 155 °C based on electrical measurements. In situ electron diffraction experiments do not show any noticeable change with temperature. SmNiO3 thin films grown on silicon show a smoothly varying compressive stress across the transition boundary. The experimental observation of a metal–insulator transition without sharp stress changes is an encouraging preliminary result towards switching device applications.