Rapid crystallization of SiO2/Sb80Te20 nanocomposite multilayer films for phase-change memory applications

The crystallization temperatures of SiO2/Sb80Te20 nanocomposite multilayer films can be modulated by varying the layer thicknesses of SiO2 and Sb80Te20. The reversible phase transition between amorphous and crystalline states can be achieved by using picosecond laser pulses with different fluences. Compared with conventional Ge2Sb2Te5, SiO2/Sb80Te20 multilayer films possess a faster crystallization speed. The existence of a periodic multilayer structure was confirmed by X-ray reflectivity and transmission electron microscopy characterizations.