Hydrogen passivation of Fe-related deep energy levels at a direct silicon-bonded (1Â 1Â 0)/(1Â 0Â 0) grain boundary

The influence of hydrogenation on the electrical characteristics of an Fe-contaminated grain boundary (GB) formed by direct silicon bonding technology has been investigated. Due to hydrogen passivation, the density of GB states is reduced by one order of magnitude, but the energy distribution of deep levels and corresponding carrier capture cross-sections cannot be significantly affected. It is believed that the efficiency of hydrogen passivation is strongly dependent on the form of Fe contaminants at the GB.