Study on the crystallization behaviors of Si2Sb2Tex materials

The crystallization behaviors and mechanisms of Si2Sb2Tex (x = 1, 3 and 6) were investigated. The crystallization process in Si2Sb2Tex films were proved to be layer by layer, which is the same as that of GeSbTe material. Among the three compositions, Si2Sb2Te3 has the best phase stability, the best data retention and a high crystallization speed. These results indicate that choosing Sb2Te3 as the basis for Si doping is the best way to optimize the properties of Si–Sb–Te materials.