کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1500081 | 993333 | 2011 | 4 صفحه PDF | دانلود رایگان |
We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained.
► Structural and optical study of a-plane GaN film grown on r-sapphire by PAMBE.
► HRXRD was used to determine the epitaxial relation of a-plane GaN with r-sapphire.
► The plane-view TEM reveals the formation of basal stacking faults in a-plane GaN.
► Low temperature PL emission was found to be dominated by basal stacking faults.
► Raman spectroscopy study shows that a-GaN film is compressively strained.
Journal: Scripta Materialia - Volume 65, Issue 1, June 2011, Pages 33–36