کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1500539 | 993350 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of nickel contamination on grain boundary states at a direct silicon bonded (1 1 0)/(1 0 0) interface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of nickel contamination on the electrical characteristics of a (1 1 0)/(1 0 0) interfacial grain boundary in p-type direct silicon bonded wafers has been investigated by current/capacitance–voltage deconvolution. It was found that, compared with a clean grain boundary, nickel could increase the density of grain boundary states, and the corresponding hole capture cross-section was increased by one order of magnitude. Shockley–Read–Hall simulation verified that these nickel-related grain boundary states could cause a larger leakage current under reverse bias than that for a clean grain boundary.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 63, Issue 11, November 2010, Pages 1100–1103
Journal: Scripta Materialia - Volume 63, Issue 11, November 2010, Pages 1100–1103
نویسندگان
Xiaoqiang Li, Xuegong Yu, Lihui Song, Deren Yang, George Rozgonyi,