Real-time evolution of electrical properties and structure of indium oxide and indium tin oxide during crystallization

Indium oxide and tin-doped indium oxide amorphous films grown by pulsed reactive magnetron sputtering were annealed in vacuum. The film structure and properties were studied using in situ X-ray diffraction, spectroscopic ellipsometry, elastic recoil detection analysis and four-point probe measurements. The electrical properties of the indium oxide film change mainly before the onset of crystallization outset. In contrast, the crystallization of tin-doped indium oxide caused a decrease in resistivity due to Sn donor activation with an estimated efficiency of 40%.