Influence of radio frequency sputtering power towards the properties of indium zinc oxide semiconducting films

We studied the influence of radio frequency (r.f.) power of a sputtering system towards the physical, electrical and optical properties of IZO semiconducting film with an Ar/O2 gas mixture. Nodules are present when sputtered at 1.8 W cm−2. Resistivity is lowest and mobility highest at low r.f. power. The Zn2In2O5 crystallite influences the film’s resistivity and mobility. The optical transparency is >80%, while the optical band gap ranges from 3.0 to 3.15 eV and is dependent to the r.f. power.