کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1500887 | 993363 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Pattern size dependence of grain growth in Cu interconnects
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Pattern size dependence of grain growth in Cu interconnects Pattern size dependence of grain growth in Cu interconnects](/preview/png/1500887.png)
چکیده انگلیسی
Fine Cu interconnects possess small grains that increase the electrical resistivity of the interconnects. We have performed an extensive transmission electron microscopy study of the grain growth in lines of different sizes, using a recently developed automated indexing method. Different annealing processes were conducted, some with the presence of a top layer that possesses very large grains. Quantification (by crystallographic indexation and mapping) of grain growth in lines as narrow as 80 nm was achieved. We found that grain growth is clearly impeded by geometrical constraints.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 63, Issue 10, November 2010, Pages 965–968
Journal: Scripta Materialia - Volume 63, Issue 10, November 2010, Pages 965–968
نویسندگان
Stefan Brandstetter, Edgar F. Rauch, Vincent Carreau, Sylvain Maîtrejean, Marc Verdier, Marc Legros,