Laser-assisted three-dimensional atom probe analysis of dopant distribution in Gd-doped CeO2

The grain boundary segregation and the concentration fluctuation of Gd in 25 at.% Gd-doped CeO2 (Gd0.25Ce0.75O1.875) have been directly characterized by a laser-assisted three-dimensional atom probe using an ultraviolent femtosecond pulse laser. Gd was found to be enriched not only at grain boundaries but also in nanosized domains within the grains. Both of these can explain the degradation of the ionic conductivity by the substitution of Gd for Ce in CeO2.