کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1501037 993368 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Atomic resolution improvement by a new method using the second derivative of the intensity function of the reconstructed exit wave of electrons for a thin β-Si3N4 crystal
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Atomic resolution improvement by a new method using the second derivative of the intensity function of the reconstructed exit wave of electrons for a thin β-Si3N4 crystal
چکیده انگلیسی
This report is an extension of a high-resolution transmission electron microscopy study of β-Si3N4 [0 0 0 1] by Ziegler et al. (2002) [1]. The aim of this work was to obtain a better structural image showing complete resolution of the 95 pm spacing for Si-N dumb-bells. This goal has been achieved with a new method using the second derivative of the intensity function of the reconstructed exit wave. The structure of this thin specimen showed an asymmetric aspect, deviating slightly from a hexagonal lattice.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 63, Issue 5, September 2010, Pages 524-527
نویسندگان
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