Electrothermal dynamic in Si-doped Sb70Te30 recording films and two-dimensional thermal simulation of phase-change random access memory

Doping Si into the Sb70Te30 recording film can increase the crystallization temperature and activation energy for crystallization so that the retention characteristics can be improved. No phase separation was found in Si-doped Sb70Te30 recording film which may benefit the cycle endurance of the PRAM device. The power consumption can be improved by increasing the Si content of the fast-growth Sb70Te30 recording film and decreasing the Seebeck coefficient of the chalcogenide film and feature size of the PRAM cell.