Dissolved Si in Mo and its effects on the properties of Mo–Si–B alloys

 The Si concentration in the Mo solid solution in ternary Mo-rich Mo–Si–B alloys was measured at room temperature and significantly higher levels than those previously reported were documented. Annealing at 1200 and 800 °C failed to produce any decrease in the Si level in solid solution, a consequence of sluggish diffusion kinetics. Measurements confirmed a continuous increase in microhardness of the solid-solution phase with the measured Si level; the results are helpful in rationalizing the high-temperature strength in multiphase alloys.