Interface reaction-accelerated L10 ordering of FePt thin films

An accelerated L10 ordering process was observed in FePt thin films deposited directly on HF-cleaned Si substrates at low annealing temperatures as compared with those deposited on nature-oxidized Si substrates, which results from an interface reaction that forms PtSi between the FePt film and the Si substrate. The L10 ordered FePt thin films prepared after 360 °C annealing show a large coercivity of Hc = 8.9 kOe and an excellent stability against thermal annealing.