CMOS–MEMS integration today and tomorrow

The integration of complementary metal oxide semiconductor (CMOS) and microelectromechanical systems (MEMS) can improve the performance of the MEMS, allows for smaller packages and leads to a lower packaging and instrumentation cost. Polycrystalline silicon–germanium (poly-SiGe) has already shown its potential for integrating MEMS and CMOS in a MEMS-last approach. The current state-of-the-art for poly-SiGe MEMS integration and the needs for the future will be addressed in this article. Market trends are translated into a roadmap for MEMS integration.