The interfacial structure of self-assembled DySi2 nanostructures grown on Si(0 0 1)

Following the successful application of the edge-to-edge matching model to the self-assembled DySi2 nanostructures on Si(0 0 1), the interfacial structure is fully described by a coincidence site lattice/complete pattern shift lattice model and the Δg parallelism criterion in this paper. The stepped interface with the terrace plane (011¯0)DySi2|(002)Si contains a higher density of near coincidence site clusters than the substrate Si(0 0 1). The one-to-one coincidence of steps and secondary misfit dislocations further reduces the interfacial energy. The calculated results are completely consistent with the previous experimental observations.