کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1503198 | 993453 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of annealing temperature on the properties of transparent conductive and near-infrared reflective ZnO:Ga films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of annealing temperature on the properties of transparent conductive and near-infrared reflective ZnO:Ga films Influence of annealing temperature on the properties of transparent conductive and near-infrared reflective ZnO:Ga films](/preview/png/1503198.png)
چکیده انگلیسی
Highly transparent conductive and near-infrared (IR) reflective Ga-doped ZnO films were deposited on glass substrate by DC reactive magnetron sputtering. The influence of post-annealing temperature on the structural, electrical and optical properties of the films was investigated. The lowest resistivity of 2.6 × 10−4 Ω cm was obtained at an annealing temperature of 450 °C. The films have low transmittance and high reflectance in the near-IR range. The average transmittance of the films is over 90% in the visible range.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 58, Issue 1, January 2008, Pages 21–24
Journal: Scripta Materialia - Volume 58, Issue 1, January 2008, Pages 21–24
نویسندگان
Quan-Bao Ma, Zhi-Zhen Ye, Hai-Ping He, Li-Ping Zhu, Jing-Yun Huang, Yin-Zhu Zhang, Bing-Hui Zhao,