Stacking faults formation mechanism of in situ synthesized TiB whiskers

In situ TiB whiskers have a hexagonal shape in the transverse section and grow along the [0 1 0]TiB direction. The crystallographic planes of the TiB whiskers in the transverse section are always (1 0 0), (1 0 1) and (101¯). The stacking faults in TiB are typically with a stacking fault plane of (1 0 0)TiB. The locations of boron atoms and the lattice mismatch energy between TiB and Ti matrix play key roles in the formation of stacking faults.